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POWER TRANSISTOR E13003
SWITCHING REGULATOR APPLICATION
* High speed switching * Suitable for switching regulator and motor control * Case : TO-92 molded plastic body
A
DIM
SEATING PLANE
TO-92
INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 ---
R P F L
B
K
G H V
D J NC
A B C D F G H J K L N P R V
NPN SILICON TRANSISTOR FEATURES
Tc=25 C unless otherwise specified
o
123
N
Parameter
Collector dissipation Collector current (DC) Collector current (Pulse) Operating and storage junction temperature range
Symbol
PC IC ICP TJ, TSTG
o o
Value
20 1.5 3 -55 C to +150 C
o
UNIT
W A A
o
C
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time
Tc=25 C unless otherwise specified
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCEsat VBEsat VBE fT tf ts
Test conditions
IC=1mA , IE=0 IC=10mA , IB=0 IE=1mA , IC=0 VCB=700V , IE=0 VCE=400V , IB=0 VEB=9V , IC=0 VCE=2V , IC=0.5mA VCE=10V , IC=0.5mA IC=1A , IB=250mA IC=1A , IB=250mA IE=2A VCE=10V , IC=100mA f=1MHz IC=1A , IB1=-IB2=0.2mA , VCC=100V
MIN
700 400 9
MAX
UNIT
V V V
1 500 1 8 5 1 1.2 3 5 0.5 2.5 40
mA
i A
mA
V V V MHz
i S i S
RATINGS AND CHARACTERISTIC CURVES E13003

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